1-26 GHz high power p-i-n diode switch

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 505-508

  Paek, Seung Won ^a   Kang, Hyun Il ^a,b   Jeon, Kye Ik ^a   Jeong, Myung Deuk ^a,c   Kim, Dong Wook ^a   Lim, Chae Rok ^a   Lee, Jae Hak ^a   Lee, Won Sang ^a   Oh, Jae Eung ^a,b   Chung, Ki Woong ^a  

^a LG   (South Korea)

^b Hanyang University   (South Korea)

^c Agency for Defence Development   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INSERTION LOSS; SINGLE POLE DOUBLE THROW SWITCH;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; INTEGRATED CIRCUIT LAYOUT; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR SUPERLATTICES;

SEMICONDUCTOR SWITCHES;

EID: 0033709092     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2000.861093     Document Type: Article

References (5)

1. K. W. Kobayashi, L. Tran, A. K Oki, and D. C. Streit, "A 50MHz-30GHz Broadband Co-Planar Waveguide SPDT PIN Diode Switch with 45-dB Isolation", IEEE Microwave and Guided Wave Lett., Vol 5, No.2, pp.56-58, Feb., 1995.
2. J.-L. Lee, D. Zych, E.-Reese, and D. M. Drury, "Monolithic 2-18GHz Low Loss, On-Chip Biased PIN Diode Switches", IEEE Trans. Microwave Theory and Tech., Vol. 43, No. 2, pp.250-256, Feb., 1995.
3. D. D. Heston, D. J. Seymour, and D. Zych, "1OOMHz to 20GHz monolithic single-pole, tow-, three-, and four-throw GaAs PIN diode switches," 1991 IEEE MTT-S Dig., pp.429-432, 1991.
4. R. Yayrani, D. C. Battle, and N. J. Barret, "GaAs surface oriented microwave PIN diode," IEEE GaAs Symp., pp.85-87, Oct. 1984.
5. F. W. Smith, A. R. Calawa, C.-L. Chen, M. J. Manfra, and L. J. Mahoney, "New MBE Buffer Used to Eliminate Backgating in GaAs MESFET's", IEEE Electron Dev. Lett., vol.9, no. 2, Feb., p.77-80, 1988.