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Volumn , Issue , 2007, Pages 572-574

Advanced MMIC for passive millimeter and submillimeter wave imaging

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); IMAGING SYSTEMS; LOW NOISE AMPLIFIERS; MILLIMETER WAVES; SUBMILLIMETER WAVES;

EID: 34548860954     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2007.373549     Document Type: Conference Paper
Times cited : (16)

References (9)
  • 1
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    • Passive Millimeter Wave Imaging
    • Sept
    • L. Yujiri, et al., "Passive Millimeter Wave Imaging," IEEE Microwave Magazine, vol. 4, pp. 39-50, Sept., 2003.
    • (2003) IEEE Microwave Magazine , vol.4 , pp. 39-50
    • Yujiri, L.1
  • 2
    • 3142667242 scopus 로고    scopus 로고
    • O.1um InGaAs/AlGaAs/GaAs HEMT MMIC Production Process for High Performance Commercial Ka-band LNAs
    • May
    • R. Lai, et al., "O.1um InGaAs/AlGaAs/GaAs HEMT MMIC Production Process for High Performance Commercial Ka-band LNAs," Dig. Int. Conf. on Gallium. Arsenide Manufacturing Technology, pp. 249-250, May, 2000.
    • (2000) Dig. Int. Conf. on Gallium. Arsenide Manufacturing Technology , pp. 249-250
    • Lai, R.1
  • 3
    • 0029490798 scopus 로고
    • MMIC-based W-band Dicke Switched Direct-Detection Receiver
    • Oct
    • D.C.W. Lo, et al., "MMIC-based W-band Dicke Switched Direct-Detection Receiver," IEEE GaAs IC Symp. Tech. Dig., pp. 226-229, Oct., 1995.
    • (1995) IEEE GaAs IC Symp. Tech. Dig , pp. 226-229
    • Lo, D.C.W.1
  • 4
    • 34548818837 scopus 로고    scopus 로고
    • A High Yield, High Performance 0.1μm InGaAs/InAlAs/InP HEMT MMIC Process for Millimeter-Wave Low Noise Applications
    • Mar
    • R. Lai, et al., "A High Yield, High Performance 0.1μm InGaAs/InAlAs/InP HEMT MMIC Process for Millimeter-Wave Low Noise Applications," Proc. Government Microcircuit Applications Conf., pp. 283-284, Mar., 1997.
    • (1997) Proc. Government Microcircuit Applications Conf , pp. 283-284
    • Lai, R.1
  • 5
    • 0033363609 scopus 로고    scopus 로고
    • W-band InP Wideband MMIC LNA with 30K Noise Temperature
    • S. Weinreb, et al., "W-band InP Wideband MMIC LNA with 30K Noise Temperature," Proc. IEEE Int. Microwave Symp. pp. 101-104, 1999.
    • (1999) Proc. IEEE Int. Microwave Symp , pp. 101-104
    • Weinreb, S.1
  • 6
    • 0030678240 scopus 로고    scopus 로고
    • D-band MMIC LNAs with 12dB Gain at 155 GHz Fabricated on a High Yield InP HEMT Production Process
    • May
    • R. Lai, et al., "D-band MMIC LNAs with 12dB Gain at 155 GHz Fabricated on a High Yield InP HEMT Production Process," Int. Conf. on InP and Related Materials, pg. 241, May, 1997.
    • (1997) Int. Conf. on InP and Related Materials , pp. 241
    • Lai, R.1
  • 7
    • 0034442937 scopus 로고    scopus 로고
    • MMIC Low-Noise Amplifiers and Applications Above 100 GHz
    • Nov
    • R. Lai, et al., "MMIC Low-Noise Amplifiers and Applications Above 100 GHz," IEEE GaAs IC Symp. Tech. Dig., pp. 139-141, Nov., 2000.
    • (2000) IEEE GaAs IC Symp. Tech. Dig , pp. 139-141
    • Lai, R.1
  • 8
    • 0035683168 scopus 로고    scopus 로고
    • A 183 GHz Low Noise Amplifier Module with 5.5 dB for the Conical-Scanning Microwave (CMIS) Program
    • May
    • R. Raja, et al., "A 183 GHz Low Noise Amplifier Module with 5.5 dB for the Conical-Scanning Microwave (CMIS) Program," IEEE MTT-S Int. Dig., vol. 3, pp. 1955-1958, May, 2001.
    • (2001) IEEE MTT-S Int. Dig , vol.3 , pp. 1955-1958
    • Raja, R.1
  • 9
    • 27844447021 scopus 로고    scopus 로고
    • 220-GHz Metamorphic HEMT Amplifier MMICs for High-Resolution Imaging Applications
    • Oct
    • A. Tessmann, "220-GHz Metamorphic HEMT Amplifier MMICs for High-Resolution Imaging Applications," IEEE J. Solid-State Circuits, vol. 40, pp. 2070-2076, Oct., 2005.
    • (2005) IEEE J. Solid-State Circuits , vol.40 , pp. 2070-2076
    • Tessmann, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.