Electrical properties of lanthanum doped Bi4Ti3O12 thin films annealed in different atmospheres

Ceramics International

Volumn 33, Issue 8, 2007, Pages 1535-1541

  Simoes A Z ^a   Ries, A ^a   Stojanovic, B D ^a   Biasotto, G ^a   Longo, E ^a   Varela, J A ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

Bismuth compounds; Crystal structure; Ferroelectric materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); FERROELECTRIC MATERIALS; FERROELECTRICITY; GRAIN SIZE AND SHAPE; HYSTERESIS; LANTHANUM;

ELECTRICAL CHARACTERIZATION; POLYMERIC PRECURSOR SOLUTION; STATIC AIR POSSESS;

THIN FILMS;

EID: 34548835736     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2006.06.001     Document Type: Article

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