Electrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method

Integrated Ferroelectrics

Volumn 60, Issue , 2004, Pages 21-31

  Simoes A Z ^a   Stojanovic, B D ^a,b   Zaghete, M A ^a   Riccardi, C S ^a   Ries, A ^a   Moura, F ^a   Longo, E ^c   Varela, J A ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b UNIVERSITY OF BELGRADE   (Serbia)

^c FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

Author keywords

BLT; Electrical properties; Thin films

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC PROPERTIES; LANTHANUM; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY;

BLT; DIELECTRIC LOSS; POLYMERIC PRECURSOR METHOD; REMNANT POLARIZATIONS;

THIN FILMS;

EID: 33751188532     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580490440837     Document Type: Article

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