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Volumn , Issue , 2007, Pages 664-665

Impact of gate tunneling leakage on performances of phase locked loop circuit in nanoscale CMOS technology

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; JITTER; LEAKAGE CURRENTS; MOS CAPACITORS;

EID: 34548781895     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.370002     Document Type: Conference Paper
Times cited : (2)

References (8)
  • 1
    • 0033725602 scopus 로고    scopus 로고
    • Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling
    • W.-C. Lee and C. Hu, "Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling," in Proc. IEEE Int. Symp. VLSI Tech., 2000, pp. 198-201.
    • (2000) Proc. IEEE Int. Symp. VLSI Tech , pp. 198-201
    • Lee, W.-C.1    Hu, C.2
  • 4
    • 0036106116 scopus 로고    scopus 로고
    • A 1 V CMOS PLL designed in high-leakage CMOS process operating at 10-700 MHz
    • R. Holzer, "A 1 V CMOS PLL designed in high-leakage CMOS process operating at 10-700 MHz," in IEEE Int. Solid-State Circuits Conf Dig. Tech. Papers, 2002, pp. 272-274.
    • (2002) IEEE Int. Solid-State Circuits Conf Dig. Tech. Papers , pp. 272-274
    • Holzer, R.1
  • 5
    • 34548810053 scopus 로고    scopus 로고
    • Method and apparatus for tunneling leakage current compensation,
    • US Patent 6744303, Jun
    • R. Maley, "Method and apparatus for tunneling leakage current compensation," US Patent 6744303, Jun. 2004.
    • (2004)
    • Maley, R.1
  • 6
    • 34548773184 scopus 로고    scopus 로고
    • Method and apparatus for gate current compensation,
    • US Patent 6696881, Feb
    • K. Ho, "Method and apparatus for gate current compensation," US Patent 6696881, Feb. 2004.
    • (2004)
    • Ho, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.