Deep traps and charge carrier lifetimes in 4H-SiC epilayers

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 493-496

  Huh, S W ^a   Sumakeris, J J ^b   Polyakov, A Y ^a   Skowronski, M ^a   Klein, P B ^c   Shanabrook, B V ^c   O'Loughlin, M J ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Deep traps; Epitaxy; Minority carrier lifetime

Indexed keywords

CARRIER LIFETIME; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; EPILAYERS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE;

DEEP TRAPS; MINORITY CARRIER LIFETIME; TIME-RESOLVED PHOTOLUMINESCENCE;

SILICON CARBIDE;

EID: 34548775787     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.493     Document Type: Conference Paper

References (11)

1. Y. Sugawara, K. Asano, R. Singh, and J.W. Palmour: Mat. Sci. Forum 338-342 (1999) p. 371
2. J. Baliga, Power Semiconductor Devices (PWS Publishing, 1996)
3. J. Zhang, L. Storasta, J.P. Bergman, N.T. Son, and E. Janzén: J. Appl. Phys. 93 (2003) p. 4708
4. T. Tawara, H. Tsuchida. S. Izumi, I. Kamata and K. Izumi: Mat. Sci. Forum 457-460 (2004) p. 565
5. L. Storasta, J.P. Bergman. C. Hallin, and E. Janzén: Mat. Sci. Forum 389-393 (2002) p. 549
6. G.M. Martin, A. Mitonneau, D. Pons, A. Mircea, and D.W. Woodard: J. Phys. C 13 (1980) p. 3855
7. O. Kordina. J.P. Bergman, C. Hallin, and E. Janzén: Appl. Phys. Lett. 69 (1996) p. 679
8. A. Galeckas, J. Linnros, M. Frischolz, and V. Grivickas: Appl. Phys. Lett. 79 (2001) p. 365
9. C.G. Hemmingsson, N.T. Son, A. Ellison, J. Zhang, and E. Janzén: Phys. Rev. B58, (1998) p. R10119
10. P. Grivickas, J. Linnros, and V. Grivickas: Mater. Sci. Forum 338-342 (2000) p. 671
11. M.M. Anikin, N.I. Kuznetsov. A.A. Lebedev, A.M. Strelehuk, and A.L. Syrkin: Sov. Phys. Semicond. 24 (1990) p. 869