The effectof Li-ion-doped porous MgO film on operational memory margin of ac-plasma display panel

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 6022-6026

  Ahn, Sung Il ^a   Uchiike, Heiju ^b   Lee, Seong Eui ^c   Kim, Kwangho ^a   Kwon, Sang Jik ^a  

^a Gachon University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Korea Polytechnic University   (South Korea)

Author keywords

ac PDP; Doping; MgO; Porous; Secondary electron emission

Indexed keywords

DOPING (ADDITIVES); IONS; LITHIUM; MAGNESIA; POROUS MATERIALS; THIN FILMS;

DOPANT CONCENTRATION; OPERATIONAL MEMORY MARGIN; SECONDARY ELECTRON EMISSION;

PLASMA DISPLAY DEVICES;

EID: 34548768802     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6022     Document Type: Article

References (20)

1. E. Choi, H. Oh, Y. Kim, J. Ko, J. Lim, J. Kim, D. Kim, G. Cho, and S. Kang: Jpn. J. Appl. Phys. 37 (1998) 7015.
2. Y. Kim, R. Kim, H. J. Kim, H. Jeon, and J. W. Park: Mater. Res. Soc. Symp. Proc. 621 (2000) Q5.6.1.
3. J. S. Oh and E. H. Choi: Jpn. J. Appl. Phys. 43 (2004) 1154.
4. Y. Murakami, H. Matsuzaki, H. Murakami, and N. Ikuta: Jpn. J. Appl. Phys. 40 (2001) 3382.
5. T. Tsujita, T. Nagatomi, Y. Takai, Y. Morita, M. Nishitani, M. Kitagawa, and T. Uenoyama: Jpn. J. Appl. Phys. 43 (2004) 753.
6. L. A. Kappers, R. L. Kroes, and E. B. Hensley: Phys. Rev. B 1 (1970) 4151.
7. K. H. Park and Y. S. Kim: IMID/IDMC'06 Dig. 2006, p. 375.
8. J. J. Scholtz, R. W. A. Schmite, B. H. W. Hendriks, and S. T. de Zwart: Appl. Surf. Sci. 111 (1997) 259.
9. Y. Mizuhara, J. Kato, T. Nagatomi, Y. Takai, and M. Inoue: J. Appl. Phys. 92 (2002) 6128.
10. K. Ohya, T. Itotani, and J. Kawata: Jpn. J. Appl. Phys. 33 (1994) 1153.
11. J. Cazaux, K. H. Kim, O. Jbara, and G. Salace: J. Appl. Phys. 70 (1991) 960.
12. T. Kamiya, M. Cholewa, A. Saint, S. Prawer, G. J. F. Legge, J. E. Butler, and D. J. Vestyck, Jr.: Appl. Phys. Lett. 71 (1997) 1875.
13. K. I. Grais and A. M. Bastawros: Jpn. J. Appl. Phys. 19 (1980) 2089.
14. H. Jacobs, J. Freely, and F. A. Brandt: Phys. Rev. 88 (1952) 492.
15. J. M. Millet and J. J. Lafon: Phys. Rev. A. 52 (1995) 433.
16. S. I. Ahn: U.S. Patent 6335393 (2002).
17. K. Yoshida, H. Uchiike, and H. Sawa: IEICE Trans. Electron. E82-C (1999) 1798.
18. I. Balint and K. Alka: Appl. Surf. Sci. 173 (2001) 296.
19. Y. Motoyama, Y. Hirano, K. Ishii, Y. Murakami, and F. Sato: J. Appl. Phys. 95 (2004) 8419.
20. H. Aritani, H. Yamada, T. Nishio, T. Shiono, S. Imamura, M. Kuno, S. Hasegawa, T. Tanaka, and S. Yoshida: J. Phys. Chem. B 104 (2000) 10133.