Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 5777-5779

  Gao, Yun ^a   Shao, Guo Sheng ^b   Li, Quan ^c   Xu, Ye Ming ^c   Wong, Sai Peng ^c   Zhou, Meng Yang ^a   Lourenco, M A ^d   Homewood, K P ^d  

^a HUBEI UNIVERSITY   (China)

^b UNIVERSITY OF BOLTON   (United Kingdom)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Electronic structure; High manganese silicides; Ion implantation; Optical absorption; Transmission electron microscopy

Indexed keywords

ABSORPTION SPECTRA; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ION IMPLANTATION; LIGHT ABSORPTION; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAP ENERGIES; HIGH-MANGANESE SILICIDES; SEMICONDUCTING HIGH MANGANESE SUICIDE (HMS); STRAIN STATES;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 34548749340     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5777     Document Type: Article

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