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Volumn 461, Issue 1, 2004, Pages 152-159

The potential of higher manganese silicide as an optoelectronic thin film material

Author keywords

Higher manganese silicide; Manganese silicide; Semiconducting silicide

Indexed keywords

ABSORPTION; BAND STRUCTURE; EPITAXIAL GROWTH; LUMINESCENCE; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON; SILICA; SINGLE CRYSTALS; SUBSTRATES; SURFACE ACTIVE AGENTS; THIN FILMS;

EID: 2942750548     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.090     Document Type: Conference Paper
Times cited : (52)

References (31)
  • 4
    • 2942744270 scopus 로고    scopus 로고
    • American Society for Metals, Metals Park, OH, no date
    • T.B. Massalski, Binary Alloy Phase Diagrams, American Society for Metals, Metals Park, OH, vol. 2, 1588, no date.
    • Binary Alloy Phase Diagrams , vol.2 , pp. 1588
    • Massalski, T.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.