Luminescence of isoelectronically ion-implanted SiO 2 layers

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 9, 2007, Pages 3132-3144

  Salh, Roushdey ^a   Fitting Kourkoutis, L ^b   Schmidt, B ^c   Fitting, H J ^a  

^a UNIVERSITY OF ROSTOCK   (Germany)

^b School of Operations Research and Industrial Engineering   (United States)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ISOELECTRONICS; OXYGEN DEFICIENT CENTERS;

AMORPHOUS MATERIALS; ANNEALING; CATHODOLUMINESCENCE; ELECTRON EMISSION; ION IMPLANTATION; NANOCLUSTERS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

SILICA;

EID: 34548742330     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200622571     Document Type: Conference Paper

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