Formation of epitaxial Β -Sn islands at the interface of SiO 2 Si layers implanted with Sn ions

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Lopes, J M J ^a   Zawislak, F C ^a   Fichtner, P F P ^a   Papalo R M ^b   Lovey, F C ^c   Condo A M ^c,d   Tolley, A J ^c,d  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b PONTIFICAL CATHOLIC UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^c CENTRO ATÓMICO BARILOCHE   (Argentina)

^d Universidad Nacional de Río Cuarto Consejo Nacional de Investigaciones Científicas y Técnicas   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FAST FOURIER TRANSFORMS; INTERFACES (MATERIALS); ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TIN; TRANSMISSION ELECTRON MICROSCOPY;

COLLISION DAMAGE; EQUILIBRIUM PROPERTIES; NANOPARTICLES; NANOSIZED ISLANDS;

SILICA;

EID: 20844438197     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1927710     Document Type: Article

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