SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1523-1528

Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; ELECTRON MICROSCOPY; FAILURE ANALYSIS; FOCUSED ION BEAMS; INTEGRATED CIRCUIT TESTING; NONDESTRUCTIVE EXAMINATION;

BACKSCATTERED ELECTRON MICROSCOPY; CHIP INSPECTION;

CHIP SCALE PACKAGES;

EID: 34548686109 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2007.07.082 Document Type: Article

Times cited : (7)

References (7)

1
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- Coaxial, photon-ion technology enables direct navigation to buried nodes on planarized surfaces, including silicon
- Thompson M.A., Richardson C., Le Roy E., Lundquist T., and Thompson W.B. Coaxial, photon-ion technology enables direct navigation to buried nodes on planarized surfaces, including silicon. Proc 28th ISTFA (2002) 409
- (2002) Proc 28th ISTFA , pp. 409
- Thompson, M.A.¹ Richardson, C.² Le Roy, E.³ Lundquist, T.⁴ Thompson, W.B.⁵

2
- 24144491329
- Electrical performance evaluation of FIB edited circuits through chip backside exposing shallow trench isolations
- Schlangen R., Kerst U., Kabakow A., and Boit C. Electrical performance evaluation of FIB edited circuits through chip backside exposing shallow trench isolations. Proc 16th ESREF (2005) 1544
- (2005) Proc 16th ESREF , pp. 1544
- Schlangen, R.¹ Kerst, U.² Kabakow, A.³ Boit, C.⁴

3
- 33847168004
- Impact of backside circuit edit on active device performance in bulk silicon ICs
- Boit C., Kerst U., Schlangen R., Kabakow A., Le Roy E., Lundquist T.R., et al. Impact of backside circuit edit on active device performance in bulk silicon ICs. Proc 37th ITC (2005) 48.2
- (2005) Proc 37th ITC
- Boit, C.¹ Kerst, U.² Schlangen, R.³ Kabakow, A.⁴ Le Roy, E.⁵ Lundquist, T.R.⁶

4
- 0010617960
- Scanning electron microscopy techniques for IC failure analysis
- Cole Jr. E.I., and Soden J.M. Scanning electron microscopy techniques for IC failure analysis. Microelectron Failure Anal, Desk Reference, 3rd Edition (1993) 163
- (1993) Microelectron Failure Anal, Desk Reference, 3rd Edition , pp. 163
- Cole Jr., E.I.¹ Soden, J.M.²

5
- 33847190718
- A simulation of backscattered electron microtomography in scanning electron microscope
- Suzuki Y., Yasuda M., Kawata H., and Hirai Y. A simulation of backscattered electron microtomography in scanning electron microscope. Proc Int Microprocess Nanotechnol Conf (2005) 100
- (2005) Proc Int Microprocess Nanotechnol Conf , pp. 100
- Suzuki, Y.¹ Yasuda, M.² Kawata, H.³ Hirai, Y.⁴

6
- 0030699011
- Effects of focused ion beam irradiation on MOS transistors
- Campbell A.N., Peterson K.A., Fleetwood D.M., and Soden J.M. Effects of focused ion beam irradiation on MOS transistors. Proc 35th Reliab Phys Symp (1997) 72
- (1997) Proc 35th Reliab Phys Symp , pp. 72
- Campbell, A.N.¹ Peterson, K.A.² Fleetwood, D.M.³ Soden, J.M.⁴

7
- 0036082239
- Recovery of shifted MOS parameters induced by focused ion beam exposure
- Kaiyuan C., Chatterjee T., Parker J., Henderson T., Martin R.S., and Edwards H. Recovery of shifted MOS parameters induced by focused ion beam exposure. Proc 40th Reliab Phys Symp (2002) 194
- (2002) Proc 40th Reliab Phys Symp , pp. 194
- Kaiyuan, C.¹ Chatterjee, T.² Parker, J.³ Henderson, T.⁴ Martin, R.S.⁵ Edwards, H.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.