SCOPUS 정보 검색 플랫폼

Volumn 45, Issue 9-11, 2005, Pages 1544-1549

Electrical performance evaluation of FIB edited circuits through chip backside exposing shallow trench isolations

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; MICROPROCESSOR CHIPS; POLYSILICON;

CIRCUIT EDIT; ELECTRICAL PERFORMANCE EVALUATION; METAL LEVELS; STI STRUCTURES;

INTEGRATED CIRCUITS;

EID: 24144491329 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2005.07.033 Document Type: Conference Paper

Times cited : (14)

References (6)

1
- 1542360079
- Microwave signal propagation in backside focused ion beam (FIB) fabricated interconnects
- th ISTFA (2002) 559.
- (2002) th ISTFA , pp. 559
- Rowlette, J.A.¹ Di Battista, M.² Fortuna, S.³ Livengood, R.H.⁴

2
- 1542330226
- Coaxial, photon-ion technology enables direct navigation to buried nodes on planarized surfaces, including silicon
- th ISTFA (2002) 409.
- (2002) th ISTFA , pp. 409
- Thompson, M.A.¹ Richardson, C.² Le Roy, E.³ Lundquist, T.⁴ Thompson, W.B.⁵

3
- 33645599658
- E. Le Roy, and M. Thompson Mat. Res. Soc. Symp. Proc. 792 2004
- (2004) Mat. Res. Soc. Symp. Proc. , vol.792
- Le Roy, E.¹ Thompson, M.²

4
- 10444220297
- Contacting silicon with FIB for backside circuit edit
- th ISTFA (2004) 157.
- (2004) th ISTFA , pp. 157
- Boit, C.¹ Kerst, U.² Sadewater, P.³ Leihkauf, R.⁴ Schömann, S.⁵ Le Royc, E.⁶ Lundquist, T.⁷

5
- 33847153736
- Effects of FIB radiation on MOS transistors
- Ann N. Campbell et al., Effects of FIB Radiation on MOS Transistors, Proc. IRPS 1997.
- Proc. IRPS 1997
- Campbell, A.N.¹

6
- 0003514380
- Cambridge University Press
- Yuan Taur, and Tak H. Ning Fundamentals of Modern VLSI Devices 1999 Cambridge University Press
- (1999) Fundamentals of Modern VLSI Devices
- Yuan, T.¹ Ning, T.H.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.