Effects of focused ion beam irradiation on MOS transistors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 72-81

  Campbell, Ann N ^a   Peterson, Kenneth A ^a   Fleetwood, Daniel M ^a   Soden, Jerry M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; ION BEAMS; ION BOMBARDMENT; MOS DEVICES;

FOCUSED ION BEAM SYSTEM;

FIELD EFFECT TRANSISTORS;

EID: 0030699011     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)