Electrical characteristics and simulations of self-switching-diodes in SOI technology

Solid-State Electronics

Volumn 51, Issue 9, 2007, Pages 1245-1249

  Farhi, G ^a   Saracco, E ^a   Beerens, J ^a   Morris, D ^a   Charlebois, S A ^a   Raskin, J P ^b  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

I V characteristics; Medici simulations; Novel devices; Self switching diodes; SOI wafers

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT SEMICONDUCTOR DEVICES; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

ELECTROSTATIC EFFECTS; MEDICI SIMULATIONS; NOVEL DEVICES; SELF-SWITCHING-DIODES; THERMAL ACTIVATION;

DIODES;

EID: 34548590478     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.013     Document Type: Article

References (11)

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