Temperature-induced metal-semiconductor transition in W-doped VO2 films studied by photoelectron spectroscopy

Solar Energy Materials and Solar Cells

Volumn 91, Issue 19, 2007, Pages 1831-1835

  Romanyuk, Andriy ^a   Steiner, Roland ^a   Marot, Laurent ^a   Oelhafen, Peter ^a  

^a UNIVERSITY OF BASEL   (Switzerland)

Author keywords

Metal semiconductor transition; Photoelectron spectroscopy; Tungsten; Vanadium oxide

Indexed keywords

CONCENTRATION (PROCESS); CORE ANALYSIS; PHOTOELECTRON SPECTROSCOPY; THIN FILMS; TUNGSTEN; VALENCE BANDS; VANADIUM COMPOUNDS;

METAL-SEMICONDUCTOR TRANSITION; SEMICONDUCTOR TRANSITION; VANADIUM OXIDE;

PHASE TRANSITIONS;

EID: 34548539625     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2007.06.013     Document Type: Article

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