Growth and characterization of epitaxial films of tungsten-doped vanadium oxides on sapphire (110) by reactive magnetron sputtering

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1817-1821

  Jin, P ^a   Tazawa, M ^a   Ikeyama, M ^a   Tanemura, S ^a   Macak K ^b   Wang, X ^b   Olafsson, S ^b   Helmersson, U ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY TARGET; DEPOSITED FILMS; DOMAIN STRUCTURE; IN-PLANE ORIENTATION; LATTICE PARAMETERS; OXYGEN FLOW; PARTIAL FLOW; POLE FIGURE; PRECISE CONTROL; REACTIVE MAGNETRON SPUTTERING; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SEMICONDUCTOR-TO-METAL PHASE TRANSITION; VANADIUM OXIDES; W-DOPING; XRD;

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); EPITAXIAL FILMS; EPITAXIAL GROWTH; OXIDE FILMS; OXIDES; OXYGEN; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS; X RAY DIFFRACTION;

TUNGSTEN;

EID: 0012860748     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581896     Document Type: Conference Paper

References (25)

1. C. H. Griffiths and H. K. Eastwood, J. Appl. Phys. 45, 2201 (1974).
2. H. A. Wriedt, in Phase Diagrams of Binary Vanadium Alloys, edited by J. F. Smith (American Society for Metals, International, Metals Park, OH, 1989), pp. 175-208.
3. R. S. Rana, D. D. Nolte, and F. A. Chudnovskii, Opt. Lett. 17, 1385 (1992).
4. S. M. Babulanam, T. S. Eriksson, G. A. Niklasson, and C. G. Granqvist, Sol. Energy Mater. 16, 347 (1987).
5. D. Wruck, S. Ramamurthi, and M. Rubin, Thin Solid Films 182, 79 (1989).
6. D. P. Partlow, S. R. Gurkovich, K. C. Radford, and L. J. Denes, J. Appl. Phys. 70, 443 (1991).
7. K. D. Rogers, J. A. Coath, and M. C. Lovell, J. Appl. Phys. 70, 1412 (1991).
8. F. J. Morin, Phys. Rev. Lett. 3, 34 (1959).
9. J. B. Goodenough, J. Solid State Chem. 3, 490 (1971).
10. G. V. Jorgenson and J. C. Lee, Sol. Energy Mater. 14, 205 (1986).
11. P. Jin and S. Tanemura, Jpn. J. Appl. Phys., Part 1 34, 2459 (1995).
12. M. Nygren and M. Israelsson, MRS Bull. 4, 881 (1969).
13. J. Reyes, M. Sayer, R. Chen, Can. J. Phys. 54, 408 (1976).
14. T. Horlin, T. Niklewski, M. Nygren, MRS Bull. 7, 1515 (1972).
15. H. Schuler, S. Klimm, G. Weissmann, C. Renner, and S. Horn, Thin Solid Films 299, 119 (1997).
16. D. B. McWhan and J. P. Remeika, Phys. Rev. B 2, 3734 (1970).
17. P. Jin, K. Ybshimura, and S. Tanemura, J. Vac. Sci. Technol. A 15, 1113 (1997).
18. I. Ivanov, P. Kazansky, L. Hultman, I. Petrov, and J.-E. Sundgren, J. Vac. Sci. Technol. A 12, 314 (1994).
19. B. Window and N. Savvides, J. Vac. Sci. Technol. A 4, 453 (1986).
20. X. Wang, U. Helmersson, J. Birch, and W. Ni, J. Cryst. Growth 171, 401 (1997).
21. K. Saitoh, H. Niwa, M. Kobayashi, S. Tanemura, M. Ikeyama, M. Takeda, H. Masuda, Y. Miyagawa, S. Nakamura, S. Miyagawa, and K. Yasuda, Rep. Gov. Ind. Res. Inst. Nagoya 39, 259 (1990) (in Japanese).
22. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 15, 227 (1986).
23. H. L. M. Chang, H. You, J. Gao, and D. J. Lam, Appl. Surf. Sci. 48/49, 12 (1991).
24. J. A. Thornton, J. Vac. Sci. Technol. A 4, 3059 (1986).
25. P. Jin, S. Nakao, and S. Tanemura, Thin Solid Films 324, 151 (1998).