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Volumn 18, Issue 39, 2007, Pages
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Low-plasma and high-temperature PECVD grown silicon-rich SiOx film with enhanced carrier tunneling and light emission
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ELECTROLUMINESCENCE;
ELECTRON TUNNELING;
ENERGY DISSIPATION;
LIGHT EMISSION;
NANOCRYSTALS;
PHOTOLUMINESCENCE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICA;
STOICHIOMETRY;
THIN FILMS;
FOWLER-NORDHEIM TUNNELING FIELD;
JUNCTION POTENTIAL BARRIER;
MOSLED;
PRIMARY ELECTRON;
THRESHOLD PLASMA POWER;
SILICON;
METAL OXIDE;
NANOCRYSTAL;
OXYGEN;
SILICON;
SILICON DIOXIDE;
TIN DERIVATIVE;
ARTICLE;
CHEMICAL COMPOSITION;
ELECTRON;
FILM;
HIGH TEMPERATURE;
LIGHT;
LIGHT EMITTING DIODE;
LUMINESCENCE;
PHOTOLUMINESCENCE;
PLASMA;
PRIORITY JOURNAL;
SAMPLE;
STOICHIOMETRY;
VAPOR;
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EID: 34548538171
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/18/39/395202 Document Type: Article |
Times cited : (26)
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References (18)
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