Electrical passivation of SiSiGeSi structures by 1-octadecene monolayers

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Antonova, Irina V ^a   Soots, Regina A ^a   Guliaev, Mitrofan B ^a   Prinz, Victor Ya ^a   Kagan, Miron S ^b   Kolodzey, James ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^c UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MEASUREMENT THEORY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PASSIVATION; SEMICONDUCTOR QUANTUM WELLS;

ELECTRICAL PASSIVATION; OCTADECENE MONOLAYERS; SILICON SURFACES;

MOLECULAR STRUCTURE;

EID: 34548515920     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2775083     Document Type: Article

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