Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2 MnGe thin film and MgO tunnel barrier

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Marukame, Takao ^a   Ishikawa, Takayuki ^a   Matsuda, Ken Ichi ^a   Uemura, Tetsuya ^a   Yamamoto, Masafumi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; ELECTRON TUNNELING; EPITAXIAL GROWTH; MAGNESIUM COMPOUNDS; MAGNETORESISTANCE; THIN FILMS;

DIRECT TUNNELING; FULL-HEUSLER ALLOY CO2 MNGE; SPIN-DEPENDENT DENSITY; TUNNEL MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 33646719049     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2167063     Document Type: Article

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