The effect on the annealing temperature of Li doped ZnO thin film for a film bulk acoustic resonator

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 343-347

  Kim, Eung Kwon ^a   Kim, Young Sung ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Annealing temperature; c axis orientation; FBAR; Li doped ZnO thin films

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; FULL WIDTH AT HALF MAXIMUM; LITHIUM; THIN FILMS; ZINC OXIDE;

ANNEALING TEMPERATURE; C-AXIS ORIENTATION; RETURN LOSS;

ACOUSTIC RESONATORS;

EID: 34548512279     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.04.012     Document Type: Article

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