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Volumn 128, Issue 1, 2008, Pages 123-128

Temperature dependence of excitonic emission in cubic CdSe thin film

Author keywords

Cadmium selenide; Exciton binding energy; Exciton phonon interaction; Photoluminescence; Temperature dependence; Thin film

Indexed keywords

BINDING ENERGY; CADMIUM COMPOUNDS; ENERGY GAP; EXCITONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; THIN FILMS;

EID: 34548499489     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2007.06.003     Document Type: Article
Times cited : (29)

References (30)
  • 2
    • 0003395029 scopus 로고
    • Madelung O., Schulz M., and Weiss H. (Eds), Springer, Berlin
    • In: Madelung O., Schulz M., and Weiss H. (Eds). Landolt-Bornstein Tables vols. 17a and b (1982), Springer, Berlin 206
    • (1982) Landolt-Bornstein Tables , vol.17 a and b , pp. 206
  • 17
    • 34548474588 scopus 로고    scopus 로고
    • Indeed, there is no abrupt change of the transition energy and FWHM above 200 K. However, we note that the half width at half maximum of higher energy wing of PL band starts to exceed that of lower energy wing of PL band, indicating the appearance of band-to-band recombination in the emission band above 200 K. Therefore, to exclude the effect, we adopt T range below 200 K for the fitting.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.