Temperature dependence of the red shift and broadening of the exciton line in CdSe/GaAs laser ablated heterostructures

Journal of Luminescence

Volumn 76-77, Issue , 1998, Pages 534-539

  Perna, G ^a   Capozzi, V ^a   Ambrico, M ^b   Smaldone, D ^b  

^a UNIVERSITY OF BARI   (Italy)

^b CNR   (Italy)

Author keywords

Cadmium selenide; Electron phonon interaction; Photoluminescence; Thin films

Indexed keywords

ENERGY GAP; EXCITONS; FILM GROWTH; HETEROJUNCTIONS; LASER ABLATION; PHONONS; PHOTOLUMINESCENCE; PLASMA INTERACTIONS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; THIN FILMS;

PULSED LASER ABLATION AND DEPOSITION (PLAD);

SEMICONDUCTOR LASERS;

EID: 0032000160     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(97)00291-3     Document Type: Article

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