Large format alInAs-InGaAs quantum-well infrared photodetector focal plane array for midwavelength infrared thermal imaging

IEEE Photonics Technology Letters

Volumn 19, Issue 18, 2007, Pages 1371-1373

  Ozer, S ^a   Tumkaya, U ^a   Besikci, C ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Focal plane array (FPA); Infrared detector

Indexed keywords

EPILAYERS; FOCAL PLANE ARRAYS; INFRARED DETECTORS; INFRARED IMAGING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

MIDWAVELENGTH INFRARED; NOISE EQUIVALENT TEMPERATURE; QUANTUM-WELL INFRARED PHOTODETECTOR;

PHOTODETECTORS;

EID: 34548267200     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.903338     Document Type: Article

References (11)

1. S. D. Gunapala, S. V. Bandara, J. K. Liu, C. J. Hill, S. B. Rafol, J. M. Mumolo, J. T. Trinh, M. Z. Tidrow, and P. D. LeVan, "1024 × 1024 pixel midwavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications," Semicond. Sci. Technol., vol. 20, pp. 473-480, 2005.
2. S. D. Gunapala, B. F. Levine, D. Ritter, R. Hamm, and M. B. Panish, "InGaAs/lnP long wavelength quantum well infrared photodetectors," Appl. Phys. Lett., vol. 58, pp. 2024-2026, 1991.
3. S. D. Gunapala, B. F. Levine, D. Ritter, R. Hamm, and M. B. Panish, "Lattice-matched InGaAsP/InP long-wavelength quantum-well infrared photodetectors," Appl. Phys. Lett., vol. 60, pp. 636-638, 1992.
4. O. Cellek, S. Ozer, and C. Besikci, "High responsivity InP-InGaAs quantum well infrared photodetectors: Characteristics and focal plane array performance," IEEE J. Quantum Electron., vol. 41, no. 7, pp. 980-985, Jul. 2005.
5. O. O. Cellek, S. Memis, U. Bostanci, S. Ozer, and C. Besikci, "Gain and transient photoresponse of quantum well infrared photodetectors: A detailed ensemble Monte Carlo study," Physica E, vol. 24, pp. 318-327, 2004.
6. A. Majumdar, A. Shah, M. Gokhale, S. Sen, S. Ghosh, B. M. Arora, and D. Tsui, "High-Responsivity High-Gain In Ga As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy," IEEE J. Quantum Electron., vol. 41, no. 6, pp. 872-878, Jun. 2005.
7. C. Jelen, S. Slivken, G. J. Brown, and M. Razeghi, "Multi-color 4-20 μm InP-based quantum well infrared photodetectors," Proc. SPIE, vol. 3629, pp. 147-154, 1999.
8. B. F. Levine, A. Y. Cho, J. Walker, R. J. Malik, D. A. Kleinmen, and D. L. Sivco, "InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ = 4.4 μm," Appl. Phys. Lett., vol. 52, pp. 1481-1483, 1988.
9. G. Hasnain, B. F. Levine, D. L. Sivco, and A. Y. Cho, "Mid-infrared detectors in the 3-5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structure," Appl. Phys. Lett., vol. 56, pp. 770-772, 1990.
10. A. Fathimulla, H. Hier, L. Aina, T. Worchesky, and P. Uppal, "InP-based multi-wavelength QWIP technology," Proc. SPIE, vol. 5406, pp. 589-599, 2004.
11. A. D. Rossi, E. Costard, N. Guerineau, and S. Rommeluere, "Effect of finite pixel size on optical coupling in QWIPs," Infrared Phys. Technol., vol. 44, pp. 325-330, 2003.