High-responsivity high-gain In0.53Ga0.47As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy

IEEE Journal of Quantum Electronics

Volumn 41, Issue 6, 2005, Pages 872-878

  Majumdar, Amlan ^a,b   Shah, Amit ^c   Gokhale, Mahesh ^c   Sen, Susanta ^d   Ghosh, Sandip ^c   Arora, Brij Mohan ^c   Tsui, Daniel ^a  

^a Princeton University   (United States)

^b INTEL CORPORATION   (United States)

^c TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^d UNIVERSITY OF CALCUTTA   (India)

Author keywords

Infrared detectors; Quantum well (QW) devices

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCONDUCTIVITY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL DEVICES; QUANTUM WELL INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 20544433667     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.846698     Document Type: Article

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