First-principles theory for Si-based, atomically thin layered semiconductor crystal

Applied Physics Letters

Volumn 91, Issue 8, 2007, Pages

  Miyazaki, Takehide ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; COVALENT BONDS; CRYSTALS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; SILICON;

GENERALIZED GRADIENT APPROXIMATION; SEMICONDUCTOR CRYSTALS;

SEMICONDUCTOR MATERIALS;

EID: 34548253576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2772782     Document Type: Article

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