Ultrathin layered semiconductor: Si-rich transition metal silicide

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 1-3, 2007, Pages

  Miyazaki, Takehide ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

ab initio; Graphene like Si layer; MOS transistor; ZrSi12 cluster

Indexed keywords

DENSITY FUNCTIONAL THEORY; MOSFET DEVICES; SILICON; TRANSITION METAL COMPOUNDS; WAVE FUNCTIONS;

ATOMIC LAYERS; GRAPHENE-LIKE SI LAYER; SEMICONDUCTING CRYSTALS; TRANSITION METAL SILICIDE;

SEMICONDUCTOR MATERIALS;

EID: 34547872798     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L28     Document Type: Article

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