Sensitivity and correlation study on Jramp test and high-field constant-voltage stress test for WLR

International Integrated Reliability Workshop Final Report

Volumn , Issue , 1999, Pages 108-110

  Chen, Yuan ^a   Li, Feng ^a   Mason, Philip W ^a   Ma, Yi ^a   Oates, Anthony S ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTOR DEVICE MODELS; SENSITIVITY ANALYSIS; STRESS ANALYSIS;

FOWLER-NORDHEIM TUNNELING; HIGH-FIELD CONSTANT-VOLTAGE STRESS (HFCVS) TESTS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

SEMICONDUCTOR DEVICE TESTING;

EID: 0033282132     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)