Effects of excess bismuth content in precursor solutions on ferroelectric properties of BiFeO3 thin films prepared by a chemical solution deposition

Ferroelectrics, Letters Section

Volumn 34, Issue 3-4, 2007, Pages 84-94

  Kim, S S ^a   Choi, E J ^a   Bhalla, A S ^b  

^a Changwon National University   (South Korea)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

BiFeO3 thin films; Dielectric properties; Excess bismuth content; Ferroelectric properties

Indexed keywords

DEPOSITION; FERROELECTRICITY; PERMITTIVITY; POLARIZATION; STOICHIOMETRY; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION; PRECURSOR SOLUTION; REMNANT POLARIZATION;

BISMUTH COMPOUNDS;

EID: 34548187798     PISSN: 07315171     EISSN: 15635228     Source Type: Journal    
DOI: 10.1080/07315170701500833     Document Type: Article

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