Modeling ion-induced pulses in radiation-hard SOI integrated circuits

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1406-1415

  Fulkerson, David E ^a   Nelson, David K ^a   Carlson, Roy M ^a   Vogt, Eric E ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

Diffusion; Drift; Medici; SEE; SEU; SOI; SPICE

Indexed keywords

INTEGRATED CIRCUITS; SILICON ON INSULATOR TECHNOLOGY; SPICE; TIME DELAY;

MEMORY CELL; OUTPUT VOLTAGE PULSE SHAPE; SINGLE-EVENT EFFECTS (SEE);

RADIATION HARDENING;

EID: 34548067885     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.903177     Document Type: Conference Paper

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