Singlemode tapered quantum dot laser diodes with monolithically integrated feedback gratings

Electronics Letters

Volumn 43, Issue 17, 2007, Pages 926-927

  Kaiser, W ^a   Deubert, S ^a   Reithmaier, J P ^a,b   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; OPTICAL PUMPING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

INTEGRATED FEEDBACK GRATINGS; SIDE-MODE SUPPRESSION;

SEMICONDUCTOR LASERS;

EID: 34548015614     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071651     Document Type: Article

References (9)

1. Walpole, J.N.: ' Semiconductor amplifiers and lasers with tapered gain regions ', Opt. Quantum Electron, 1996, 28, p. 623-645 10.1007/BF00411298
2. Kelemen, M.T., Weber, J., Kaufel, G., Bihlmann, G., Moritz, R., Mikulla, M., and Weimann, G.: ' Tapered diode lasers at 976nm with 8W nearly diffraction limited output power ', Electron. Lett., 2005, 41, (18), p. 1011-1013 10.1049/el:20052504 0013-5194
3. Chi, M.J., Jensen, O.B., Holm, J., Pedersen, C., Andersen, P.E., Erbert, G., Sumpf, B., and Petersen, P.M.: ' Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier ', Opt. Express, 2005, 13, (26), p. 10589-10596 1094-4087
4. Schwertfeger, S., Wiedmann, J., Sumpf, B., Klehr, A., Dittmar, F., Knauer, A., Erbert, G., and Tränkle, G.: ' 7.4W continuous-wave output power of master oscillator power amplifier system at 1083nm ', Electron. Lett., 2006, 42, (6), p. 346-347 10.1049/el:20060260 0013-5194
5. Parke, R., Welch, D.F., Hardy, A., Lang, R., Mehuys, D., Obrien, S., Dzurko, K., and Scifres, D.: ' 2.0W CW, diffraction-limited operation of a monolithically integrated master oscillator power-amplifier ', IEEE Photonics Technol. Lett., 1993, 5, (3), p. 297-300 1041-1135
6. Park, S.W., Moon, C.K., Kim, D.Y., Kim, Y.K., and Song, J.I.: ' A two-step laterally tapered 1.55-m SSC DFB laser fabricated by using a nonselective grating process ', IEEE Photonics Technol. Lett., 2004, 16, (3), p. 732-734 1041-1135
7. Kamp, M., Schmitt, M., Hofmann, J., Schäfer, F., Reithmaier, J.P., and Forchel, A.: ' InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C ', Electron. Lett., 1999, 35, (23), p. 2036-2037 10.1049/el:19991352 0013-5194
8. Auzanneau, S.C., Calligaro, M., Krakowski, M., Klopf, F., Deubert, S., Reithmaier, J.P., and Forchel, A.: ' High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980nm with high wavelength stability ', Appl. Phys. Lett., 2004, 84, (13), p. 2238-2240 10.1063/1.1650913 0003-6951
9. Deubert, S., Debusmann, R., Reithmaier, J.P., and Forchel, A.: ' High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources ', Electron. Lett., 2005, 41, (20), p. 1125-1127 10.1049/el:20052675 0013-5194