Effects of fast secondary electrons to low-voltage electron beam lithography

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 6, Issue 2, 2007, Pages

  Bolorizadeh, Mehdi ^a   Joy, David C ^b  

^a UNIVERSITY OF TENNESSEE   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Elastic and inelastic collisions; Fast secondary electrons; Lithography; Monte Carlo simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRODEPOSITION; ELECTRON BEAM LITHOGRAPHY; MONTE CARLO METHODS; SATURATION (MATERIALS COMPOSITION);

DIRECT WRITING ELECTRON BEAM LITHOGRAPHY (DWEBL); ELASTIC AND INELASTIC COLLISIONS; FAST SECONDARY ELECTRONS (FSE); ULTRALOW-ENERGY ELECTRONS;

ELECTRON MOBILITY;

EID: 34548013530     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2728899     Document Type: Article

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