157-nm lithography with high numerical aperture lens for sub-70 nm node

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 39-46

  Itani, Toshiro ^a   Wakamiya, Wataru ^a   Cashmore, Julian ^b   Gower, Malcolm ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b Exitech Ltd   (United Kingdom)

Author keywords

157 nm lithography; F2 laser; Fluoropolymer resist; Phase shifting mask

Indexed keywords

FLUORINE CONTAINING POLYMERS; MASKS; SEMICONDUCTOR DEVICES;

PATTERN-TRANSFER PROCESSES;

LITHOGRAPHY;

EID: 0038697393     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00057-1     Document Type: Conference Paper

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