Iodine solid source inductively coupled plasma etching of InP

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 16-19, 2005, Pages

  Matsutani, Akihiro ^a   Ohtsuki, Hideo ^b   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Dry etching; Inductively coupled plasma (ICP); InP; Iodine; Solid source

Indexed keywords

DRY ETCHING; INDUCTIVELY COUPLED PLASMA; IODINE; PLASMA ETCHING; VAPOR PRESSURE;

GAS SOURCE; INP; SOLID SOURCE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 30544448537     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L576     Document Type: Article

References (4)

1. T. Yoshikawa, S. Kohmoto, M. Anan, N. Hamao, M. Baba, N. Takado, Y. Sugimoto, M. Sugimoto and K. Asakawa: Jpn. J. Appl. Phys. 31 (1992) 4381.
2. C. Youtsey, R. Grundbacher, R. Panepucci, I. Adesida and C. Caneau: J. Vac. Sci. & Technol. B12 (1994) 3317.
3. O. Allen Vawter and H. Ashby: J. Vac. Sci. & Technol. B12 (1994) 3374.
4. A. Matsutani, F. Koyama and K. Iga: Jpn. J. Appl. Phys. 42 (2003) L1414.