Two-dimensional quantization effect on indirect tunneling in an insulated-gate lateral pn-junction structure with a thin silicon layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 A, 2000, Pages 1597-1603

  Omura, Yasuhisa ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

Gated pn junction; Negative conductance; Resonance; Silicon on insulator; Tunneling; Two dimensional quantization

Indexed keywords

EID: 0043068871     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1597     Document Type: Article

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