Enhancement of post-Cu-chemical mechanical polishing cleaning process for low-k substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 A, 2006, Pages 7637-7644

  Miyamoto, Makoto ^a   Hirano, Shinya ^b   Chibahara, Hiroyuki ^b   Watadani, Takashi ^b   Akazawa, Moriaki ^b   Furukawa, Sciji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Hydrophobicity; Low k; Post Cu CMP cleaning; Surfactant; Watermark; Wettability

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROPHOBICITY; PERMITTIVITY; SURFACE ACTIVE AGENTS; WETTING;

INTERLAYER DIELECTRICS (ILD); SILICON HYDRATES; SPIN DRYING; ULTRAPURE WATER (UPW); WATERMARK GENERATION;

CHEMICAL MECHANICAL POLISHING;

EID: 34547914868     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7637     Document Type: Article

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