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Volumn 46, Issue 8 A, 2007, Pages 5076-5079

Nanotopography impact of surfactant concentration and molecular weight of nano-ceria slurry on remaining oxide thickness variation after shallow trench isolation chemical mechanical polishing

Author keywords

Ceria slurry; Nanotopography; STI CMP; Surfactant concentration; Surfactant molecular weight

Indexed keywords

CHEMICAL MECHANICAL POLISHING; MOLECULAR WEIGHT; NANOSTRUCTURED MATERIALS; SURFACE ACTIVE AGENTS; THICKNESS CONTROL; TOPOGRAPHY;

EID: 34547886156     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5076     Document Type: Article
Times cited : (3)

References (20)
  • 1
    • 2442432212 scopus 로고
    • Lattice Press, Sunset Beach, CA, Chap. 13, p
    • S. Wolf: Silicon Processing for the VLSI Era (Lattice Press, Sunset Beach, CA, 1990) Vol. 2, Chap. 13, p. 24.
    • (1990) Silicon Processing for the VLSI Era , vol.2 , pp. 24
    • Wolf, S.1
  • 3
    • 0001466853 scopus 로고    scopus 로고
    • INTEL Corp., Future Fabr. Int
    • K. V. Ravi: INTEL Corp., Future Fabr. Int. 7 (1999) 207.
    • (1999) , vol.7 , pp. 207
    • Ravi, K.V.1
  • 4
    • 34547866439 scopus 로고    scopus 로고
    • SEMI Document M43, Guide for Reporting Wafer Nanotopography.
    • SEMI Document M43, Guide for Reporting Wafer Nanotopography.
  • 6
    • 34547923655 scopus 로고    scopus 로고
    • Ph. D. Thesis, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts
    • B. Lee: Ph. D. Thesis, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts (2002).
    • (2002)
    • Lee, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.