Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2062-2066

  Wang, Grace Huiqi ^a   Toh, Eng Huat ^a   Tung, Chih Hang ^b   Du, Anyan ^b   Lo, Guo Qiang ^b   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Epitaxy; Ge condensation; Mobility; Silicon germanium; Strain

Indexed keywords

ELECTRON MOBILITY; EPITAXIAL GROWTH; LATTICE MISMATCH; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; TENSILE STRAIN;

GE-CONDENSATION; SILICON-GERMANIUM-ON-INSULATOR TECHNOLOGY; STRESS SIMULATIONS;

FIELD EFFECT TRANSISTORS;

EID: 34547880468     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2062     Document Type: Article

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