Advanced air gap process for multi-level-cell flash memories reducing threshold voltage interference and realizing high reliability

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2184-2187

  Tsukamoto, Keisuke ^a   Murata, Tatsunori ^a   Fukumura, Tatsuya ^a   Ohta, Fumihito ^a   Yoshitake, Takayuki ^a   Shimizu, Satoshi ^a   Ikeda, Yoshihiro ^a   Asai, Koyu ^a   Shimizu, Masahiro ^a   Tsuchiya, Osamu ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Air gap; Flash memory; Hydrogen; Multi level cell; Reliability; Vth interference

Indexed keywords

CAPACITANCE MEASUREMENT; PERMITTIVITY; RELIABILITY THEORY; THRESHOLD VOLTAGE; WAVE INTERFERENCE;

AIR GAP STRUCTURE; MULTI-LEVEL-CELL (MLC) FLASH MEMORIES; THRESHOLD VOLTAGE INTERFERENCE;

FLASH MEMORY;

EID: 34547865797     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2184     Document Type: Article

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