The air spacer technology for improving the cell distribution in 1 giga Bit NAND flash memory

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 36-37

  Kang, Daewoong ^b   Shin, Hyungcheol ^a   Chang, Sungnam ^a   An, Jungjoo ^a   Lee, Kyongjoo ^a   Kim, Jinjoo ^a   Jeong, Eunsang ^a   Kwon, Hyukje ^a   Lee, Eunjung ^a   Seo, Seunggun ^a   Lee, Wonseong ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751029304     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629483     Document Type: Conference Paper

References (3)

1. J.D. Lee et al., EDL pp. 264-266, 2002.
2. J.H. Park et al., IEDM pp. 873-876 2004.
3. Y.S. Hisamune et al., IEDM pp. 19-22, 1993.