Hydrogen ion drift into underlying oxides by rf bias during high-density plasma chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 7863-7868

  Yamaguchi, Tadashi ^a   Sawada, Mahito ^a   Asai, Koyu ^a   Kobayashi, Kiyoteru ^a,b   Yoneda, Masahiro ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

CVD; Gap filling; HDP CVD; High density plasma; Hydrogen; Oxide degradation

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; IONS; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICES;

GAP FILLING; HDP-CVD; HIGH-DENSITY PLASMAS;

HYDROGEN;

EID: 31544468661     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7863     Document Type: Article

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