Increasing the operating temperature of boron doped silicon terahertz electroluminescence devices

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Xuan, G ^a   Kim, S ^a   Coppinger, M ^a   Sustersic, N ^a   Kolodzey, J ^a   Lv, P C ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b INTELLIGENT AUTOMATION INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; DOPING (ADDITIVES); ELECTROOPTICAL DEVICES; SILICON;

DOPANT OCCUPATION FUNCTIONS; SILICON DOPANT BASED TERAHERTZ DEVICES; TERAHERTZ DEVICES;

ELECTROLUMINESCENCE;

EID: 34547838818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2768195     Document Type: Article

References (12)

1. T. Loffler, T. May, C. A. Weg, A. Alcin, B. Hills, and H. G. Roskos, Appl. Phys. Lett. 90, 091111 (2007).
2. E. Pickwell and V. P. Wallace, J. Phys. D 39, R301 (2006).
3. T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, and M. Koch, Electron. Lett. 40, 124 (2004).
4. T. N. Adam, R. T. Troeger, S. K. Ray, P.-C. Lv, and J. Kolodzey, Appl. Phys. Lett. 83, 1713 (2003).
5. P.-C. Lv, R. T. Troeger, T. N. Adam, S. Kim, J. Kolodzey, I. N. Yassievich, M. A. Odnoblyudov, and M. S. Kagan, Appl. Phys. Lett. 85, 22 (2004).
6. P.-C. Lv, R. T. Troeger, S. Kim, S. K. Ray, K. W. Goossen, J. Kolodzey, I. N. Yassievich, M. A. Odnoblyudov, and M. S. Kagan, Appl. Phys. Lett. 85, 3660 (2004).
7. S. A. Lynch, P. Townsend, G. Matmon, D. J. Paul, M. Bain, H. S. Gamble, J. Zhang, Z. Ikonic, R. W. Kelsall, and P. Harrison, Appl. Phys. Lett. 87, 101114 (2005).
8. S. Kumar, B. S. Williams, S. Kohen, Q. Hu, and J. L. Reno, Appl. Phys. Lett. 84, 2494 (2004).
9. R. Buczko and F. Bassani, Phys. Rev. B 45, 5838 (1992).
10. A. Onton, P. Fisher, and A. K. Ramdas, Phys. Rev. 163, 686 (1967).
11. P.-C. Lv, R. T. Troeger, X. Zhang, T. N. Adam, J. Kolodzey, M. A. Odnoblyudov, and I. N. Yassievich, J. Appl. Phys. 98, 093710 (2005).
12. Siegfried Selberherr, IEEE Trans. Electron Devices 36, 1464 (1989).