Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Lv, P C ^a   Troeger, R T ^a   Zhang, X ^a   Adam, T N ^a   Kolodzey, J ^a   Odnoblyudov, M A ^b   Yassievich, I N ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; HOT HOLES; PUMPING CURRENTS; TERAHERTZ SOURCES;

BORON; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; OSCILLATORS (ELECTRONIC); SILICON;

ELECTRON ENERGY LEVELS;

EID: 27844603945     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2128045     Document Type: Article

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