Study of time dependent dielectric breakdown distribution in ultrathin gate oxide

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 25-28, 2007, Pages

  Miyakawa, Takashi ^a   Ichiki, Tsutomu ^a   Mltsuhashi, Junichi ^a   Miyamoto, Kazutoshi ^a   Tada, Tetsuo ^b   Koyama, Takeshi ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b TOKUSHIMA BUNRI UNIVERSITY   (Japan)

Author keywords

Gate oxide breakdown; MOS device; Percolation model; Reliability; TDDB; Weibull distribution; Weibull slope

Indexed keywords

CRYSTAL DEFECTS; PERCOLATION (SOLID STATE); WEIBULL DISTRIBUTION;

GATE OXIDE BREAKDOWN; PERCOLATION MODEL; WEIBULL SLOPE;

ELECTRIC BREAKDOWN;

EID: 34547829047     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L691     Document Type: Article

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