Impact of forward substrate bias on threshold voltage fluctuation in metal-oxide-sejniconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 7 A, 2007, Pages 4105-4107

  Terauchi, Mamoru ^a  

^a HIROSHIMA CITY UNIVERSITY   (Japan)

Author keywords

Charge sharing model; Depletion layer width; Forward body bias; MOSFET; Threshold voltage fluctuation

Indexed keywords

BIAS CURRENTS; CONCENTRATION (PROCESS); IMPURITIES; THRESHOLD VOLTAGE;

FORWARD BODY BIAS; THRESHOLD VOLTAGE FLUCTUATION;

MOSFET DEVICES;

EID: 34547828959     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.4105     Document Type: Article

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