Solution for 100 nm - EBM-4000

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 697-704

  Hattori, Yoshiaki ^a   Hattori, Kiyoshi ^a   Murooka, Ken Ichi ^a   Abe, Takayuki ^a   Yasuda, Satoshi ^a   Uno, Taiga ^a   Murakamai, Eiji ^a   Nakayamada, Noriaki ^a   Shimomura, Naoharu ^a   Yamashita, Ttsuyoshi ^a   Yamada, Noboru ^a   Sakai, Akihiro ^a   Honda, Hirohiko ^a   Shimoyama, Toshiaki ^a   Nakaso, Kiyoshi ^a   Inoue, Hideo ^a   Onimaru, Yoshiaki ^a   Makiyama, Keiichi ^a   Ogawa, Yoji ^a   Takigawa, Tadahiro ^a  

^a Toshiba Machine Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; PHASE SHIFT; VACUUM;

PHASE SHIFT MASKS (PSM);

MASKS;

EID: 1642454336     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.476926     Document Type: Article

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7. H.J. Kwon et al., SPIE symposium on Photomask and Next-generation Lithography Mask Technol. VIII, SPIE Vol.4409, p.382 (2001).
8. M. Ogasawara et al., J. Vac. Sci. Technol. B17 (1999).