Development of semiconductor imaging detectors for a Si/CdTe Compton camera

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 579, Issue 2 SPEC. ISS., 2007, Pages 871-877

  Watanabe, Shin ^a   Takeda, Shin'ichiro ^a,b   Ishikawa, Shin nosuke ^a,b   Odaka, Hirokazu ^a,b   Ushio, Masayoshi ^a,b   Tanaka, Takaaki ^a,b   Nakazawa, Kazuhiro ^a   Takahashi, Tadayuki ^a,b   Tajima, Hiroyasu ^c   Fukazawa, Yasushi ^d   Kuroda, Yoshikatsu ^e   Onishi, Mitsunobu ^e  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d HIROSHIMA UNIVERSITY   (Japan)

^e MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

Cadmium telluride (CdTe); Compton telescope; Gamma ray detector; Silicon strip detector

Indexed keywords

CAMERAS; COMPTON SCATTERING; IMAGE RESOLUTION; PIXELS; SEMICONDUCTING CADMIUM TELLURIDE;

CADMIUM TELLURIDE (CDTE); COMPTON TELESCOPE; GAMMA-RAY DETECTORS; SILICON STRIP DETECTORS;

SILICON DETECTORS;

EID: 34547789853     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.05.306     Document Type: Article

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