Effect of sputtering power on the physical properties of Cu3N films formed by DC magnetron sputtering

Synthesis and Reactivity in Inorganic, Metal-Organic and Nano-Metal Chemistry

Volumn 37, Issue 6, 2007, Pages 393-395

  Reddy, K Venkata Subba ^a   Uthanna, S ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Copper nitride films; Magnetron sputtering

Indexed keywords

EID: 34547784580     PISSN: 15533174     EISSN: 15533182     Source Type: Journal    
DOI: 10.1080/15533170701465697     Document Type: Conference Paper

References (9)

1. 3N film for a new light recording media. Jpn. J. Appt. Phys.1990, 29, 1985-1986.
2. Maruyama, T.; Morishita, T. Copper nitride and tin nitride thin films for write-once optical recording media. Appl. Phys. Lett.1996, 69, 890-891.
3. 4N bilayers. Appl. Phys. Lett.2002, 80, 1823-1825.
4. Venkata Subba Reddy, K.; Sreedhara Reddy, P.; Uthanna, S. Dc magnetron sputter deposition of copper nitride films. J. Instrum. Soc. India2006, 36, 113-117.
5. Wagner, C. D. Handbook of X-ray Photoelectron Spectroscopy; Perkin-Elmer Corp: Eden Praire, Minnesota, 1978.
6. Soto, G.; Diaz, D. A.; de la Cruz, W. Copper nitride films produced by reactive pulsed laser deposition. Mater. Lett.2003, 57, 4130-4133.
7. Du, Y.; Ji, A. L.; Ma, L. B.; Wang, Y. Q.; Cao, Z. X. Electrical conductivity and photorefiectance of nanocrystalline copper nitride thin films deposited at low temperature. J. Cryst. Growth2005, 280, 490-494.
8. Ji, A. L.; Huang, R.; Du, Y.; Li, C. R.; Wang, Y. P.; Cao, Z. X. Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering. J. Cryst. Growth2006, 295, 79-83.
9. Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Liu, P. X. Hall effect of copper nitride films. Phys. Stat. Sol. (a)2005, 202, 1987-1993.