Novel cyclopentadienyl based precursors for CVD of W containing films

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9120-9124

  Anacleto, Antony Correia ^a   Blasco, Nicolas ^a   Pinchart, Audrey ^a   Marot, Yves ^a   Lachaud, Christophe ^a  

^a AIR LIQUIDE   (France)

Author keywords

Diffusion barrier; Electrode; MOCVD; Precursor; Thermal behavior; Tungsten

Indexed keywords

ATOMIC LAYER DEPOSITION; DIFFUSION BARRIERS; ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL PROPERTIES; REACTION KINETICS; SURFACE REACTIONS; TUNGSTEN;

CYCLOPENTADIENYL; DECOMPOSITION PATHWAY;

THIN FILMS;

ATOMIC LAYER DEPOSITION; DIFFUSION BARRIERS; ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL PROPERTIES; REACTION KINETICS; SURFACE REACTIONS; THIN FILMS; TUNGSTEN;

EID: 34547699710     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.112     Document Type: Article

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