Metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: The influence of Indium composition

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 235-238

  Bollaert, S ^a   Cordier, Y ^a   Happy, H ^a   Zaknoune, M ^a   Hoel, V ^a   Lepilliet, S ^a   Cappy, A ^a  

^a Microelectronique du Nord   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SUBSTRATES;

CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032271792     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)